Abstract
•We have successfully fabricated a Au/Anthracene/p-Si/Al organic/inorganic heterojunction.•The calculated series resistance and the shunt resistance of the device were found to be 440Ω and 1.47MΩ, respectively.•The Cheung–Cheung and Norde’s models were used to investigate and determine the heterojunction parameters.•Essential junction parameters and performance of heterojunction established a photovoltaic behavior.•Open circuit voltage (Voc) 0.382V, short circuit photocurrent (ISC) 0.72mA and power conversion efficiency (η) of 4.65%.
Hybrid organic/inorganic heterojunction of nanocrystalline Anthracene and p-Si was fabricated by using a conventional thermal evaporation technique. The crystal and molecular structure of the Anthracene thin films were analyzed by means of X-ray diffraction (XRD), and Fourier Transformation-Infra Red (FT-IR) spectroscopy. The morphologies of the Anthracene/p-Si were investigated by scanning electron microscopy (SEM). The dark current–voltage (I–V) characteristics of Au/Anthracene/p-Si/Al heterojunction were investigated at room temperature (293K). The calculated series resistance and the shunt resistance of the device were found to be 440Ω and 1.47MΩ, respectively. The Cheung–Cheung and Norde’s models were used to investigate and determine the heterojunction parameters. The ideality factor and barrier height values of the Au/Anthracene/p-Si/Al diode were obtained to be 1.1 and 0.464eV, respectively. The dependence of capacitance–voltage (C−2–V) for the device Anthracene/p-Si was found to be almost linear. Essential junction parameters and performance of heterojunction established a photovoltaic behavior with an open circuit voltage (Voc) 0.382V, short circuit photocurrent (ISC) 0.72mA and power conversion efficiency (η) of 4.65%.