Abstract
Molecular beam epitaxy was applied to evaporate a set of Au/ZnTe:I/CdTe:I/GaAs/In heterostructures. The resulted heterostructures were examined for photovoltaic energy conversion application. Electrical characteristics were studied for understanding the relevant electrical transport mechanisms. The current-voltage (I-V) characteristics were checked under dark and light conditions. Ideality factor indicates the recombination mechanisms in the designed device; its value equals (3.22). Under various light intensities (1-140mWcm(-2)), the I-V curves are affected highly by reverse voltage bias. The open-circuit voltage increases exponentially with the illumination and its values of this device increased with increasing light intensity (L), where 55mV at 1mWcm(-2) and 465mV at 140mWcm(-2). Electrical as well as power related parameters of the designed device were interpreted. Photosensitivity and Responsitivity of the studied device showed a high photoresponse under different light intensities. Au/ZnTe:I/CdTe:I/GaAs/In heterostructures is a promising material for photosensor and optoelectronic applications.