Abstract
In this work, we design and simulate a doping-less normally OFF/enhancement mode GaN based MOSFET. The novelty of the device is that it uses the charge plasma concept to induce
n
type charge plasma in an undoped GaN film, by employing metal electrodes, to realize source and drain regions of a GaN MOSFET. The proposed device is not a hetero-structure device, like the conventional GaN/AlGaN MOSFET and is hence more reliable and free from the hetero-epitaxial defects, inverse piezoelectric effects, and can have reduced leakage. Further, the proposed device can be fabricated at a reduced thermal budget as it does not possess any doped region. A two dimensional calibrated simulation study of the proposed device has revealed that it exhibits a threshold voltage of 1.4 V, large
I
ON
/
I
OFF
ratio of
10
12
, cutoff frequency (
f
T
) of 0.58 GHz, maximum oscillation frequency (
f
max
) of 3.2 GHz, transconductance (
g
m
) of 40 mS/mm and a breakdown voltage of 22 V (at
L
GD
=
0
). Further, the enhancement mode operation in the proposed device has been realized in a much easier way than that in the state of the art doping less AlGaN/GaN based devices. A process flow for the fabrication of the proposed device is also given.