Abstract
Fin Field Effect Transistors (FinFETs) have appeared as a replacement for devices like Metal Oxide Semiconductor Field Effect Transistor (MOSFET) at low power operations. This paper presents a novel 3-D Quad gate FinFET device designed with vertically stacked Nano-sheets. This device is designed on COGENDA TCAD (Tanner Computer Aided Design) tool at 30 nm technology node. From the general model of tri-gate FinFET, the structure is modified with a new design approach. The approach includes addition of fourth gate to the basic FinFET tri-gate structure. Also, inclusion of three vertically stacked Nano-sheets as fins forms a new structure of Quad Gate vertically Stacked Nano-sheets FinFET (QG-SNS FinFET). The simulation results reveal that the designed device manifests steep Sub-threshold Slope (SS) of 26.7 mV/ decade, remarkably reduced OFF state current (I
OFF
) of the order of 9.85 × 10
−14
A and comparable ON current (I
ON
) of 1.0 × 10
−5
A. The performance investigation of the device also includes cut off frequency (F
T
), threshold voltage (V
th
), total gate capacitance (C
GG
) and transconductance (G
m
). Hence the designed device is well suited for low power and high performance applications.