Abstract
The paper covers a useful and practical method for users of power semiconductor devices to derive dynamic thermal models of discrete diode packages. Temperature estimation of power electronic devices has generally been performed using transient thermal equivalent circuits. The study leads to correcting the junction temperature values estimated from the transient thermal impedance. The corrections depend on multidimensional thermal phenomena in the structure.
An advanced 1D thermal model based on the finite element method is proposed. It takes into account the effect of the heat spreading angle in the device.
It takes into account the main thermal temperature-related non-linearties of package layers. The derived thermal models offer an excellent trade-off between accuracy, efficiency and CPU-cost. (C) 2011 Elsevier Masson SAS. All rights reserved.