Abstract
Silicon-based optical modulators are expected to be important components in some optical networks. The optical modulation mechanism can be achieved either via the plasma dispersion effect, or by thermal means. Both are relatively slow processes when utilized in large (multi micron) waveguide structures, which researchers tend to concentrate on for ease of coupling. Using large waveguide structures limits the operating speed and hence excludes the applicability of these devices in areas where higher speeds are required. This limitation could be overcome by using smaller waveguides (of the order of ~1 micron). In this paper, we present the basic operating mechanism, design, and fabricationdetails of an optimum three terminal p-i-n diode based optical phase modulator based on Silicon-On-Insulator (SOI). The device was optimized via electrical and optical modeling and is predicted to operate at ~1.3 GHz with a power reduction of 900 percent, as compared to previously published designs. (Author)