Abstract
This article is devoted to the study of various dielectric and optoelectrical parameters, besides electronic polarizability, and metallization parameter of amorphous Pb10Se90-xGex (0.0 <= x <= 10.0 at.%) thin films. These studies are based on the calculated values of refractive and extinction coefficient. The thin films were prepared using the conventional thermal evaporation technique. All samples were previously investigated by XRD, EDX, and UV-Vis-NIR spectrophotometric measurements. Using refractive index and extinction coefficient spectra, the dielectric constant (real and imaginary parts), dissipation and quality factors are discussed. Also, many optoelectrical factors of Pb-Se-Ge films have been studied. The energy loss functions, high-frequency dielectric constant and optical carrier concentration are also deduced and studied. The plasma frequency and some other optoelectrical parameters, such as scattering time, optical mobility, and optical resistivity are studied and discussed. From the computed results it can be said that these films can be used in many optoelectronic applications, IR photodetectors, and sensors.