Dislocation behavior in silicon crystal induced by laser shock peening : A multiscale simulation approach

Journal article

Peer reviewed

G. J Cheng and M. A Shehadeh

Scripta materialia, Vol.53(9), pp.1013-1018

01/11/2005

Abstract

Applied sciences

Exact sciences and technology

General

Metals. Metallurgy

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Title: Dislocation behavior in silicon crystal induced by laser shock peening : A multiscale simulation approach
Creators - without role: G. J Cheng - Washington State University
M. A Shehadeh - Washington State University
Publication Details: Scripta materialia, Vol.53(9), pp.1013-1018
Publisher: Elsevier Science
Identifiers: 9913350608331
Academic Unit: Alfaisal University
Language: English
Resource Type: Journal article