Dislocation-free undoped semi-insulating gaas epilayers prepared by chloride chemical vapor deposition and successive wafer annealing

Journal article

Peer reviewed

A Noda, K Kohiro and O Oda

Journal of electronic materials, Vol.25(12), pp.1841-1844

01/12/1996

Abstract

Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)

Cross-disciplinary physics: materials science; rheology

Exact sciences and technology

Materials science

Methods of deposition of films and coatings; film growth and epitaxy

Physics

1 Record Views

Title: Dislocation-free undoped semi-insulating gaas epilayers prepared by chloride chemical vapor deposition and successive wafer annealing
Creators - without role: A Noda - Japan Petroleum Energy Center
K Kohiro - Japan Petroleum Energy Center
O Oda - Japan Petroleum Energy Center
Publication Details: Journal of electronic materials, Vol.25(12), pp.1841-1844
Publisher: Institute of Electrical and Electronics Engineers
Identifiers: 9921610008331
Academic Unit: King Saud Bin Abdulaziz University for Health Sciences
Language: English
Resource Type: Journal article