Doping, patterning and analysis of tin oxide films using ion beams

Journal article

Peer reviewed

A. H Hamdi, R. C. O Laugal, A. B Catalan, A. L Micheli and N. W Schubring

Thin solid films, Vol.198(1-2), pp.9-15

20/03/1991

Abstract

Condensed matter: structure, mechanical and thermal properties

Defects and impurities in crystals; microstructure

Doping and impurity implantation in iii-v and ii-vi semiconductors

Exact sciences and technology

Physics

Structure of solids and liquids; crystallography

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Title: Doping, patterning and analysis of tin oxide films using ion beams
Creators - without role: A. H Hamdi - GM Research Laboratories, electrical electronics eng. dep., Warren MI 48090-9050, United States
R. C. O Laugal - GM Research Laboratories, electrical electronics eng. dep., Warren MI 48090-9050, United States
A. B Catalan - GM Research Laboratories, electrical electronics eng. dep., Warren MI 48090-9050, United States
A. L Micheli - GM Research Laboratories, electrical electronics eng. dep., Warren MI 48090-9050, United States
N. W Schubring - GM Research Laboratories, electrical electronics eng. dep., Warren MI 48090-9050, United States
Publication Details: Thin solid films, Vol.198(1-2), pp.9-15
Publisher: Elsevier Science
Identifiers: 9918744208331
Academic Unit: King Abdulaziz City for Science & Technology
Language: English
Resource Type: Journal article