Abstract
Fabricated with p-type small molecules, thin-film transistors were fabricated, characterized and modeled, as a channel layer having different channel lengths. To regenerate current-voltage patterns with reference to passing on the traits to the saturation and linear regimes, the methodological framework was further expanded, which also extracted Vth values of fabricated OTFTs. The calculated results of the transfer characteristics by the used model are compatible well with the experimental outcome of all fabricated OTFTs. The values generated by the applied model were close to the experimentally generated voltage threshold parameter in the saturation and linear regimes. The results obtained showed increased drain current upon decreasing channel length while threshold voltage (V-th m) was directed towards the positive direction, which was attributed to the effect of draininduced barrier lowering (DIBL). The extracted amount of DIBL as a function of channel length showed a proportionate but inverse relationship.