Drift mobility in hydrogenated amorphous silicon from photoconductivity decay

Journal article

Peer reviewed

G Moddel and P Viktorovitch

Journal of applied physics, Vol.65(1), pp.205-209

1989

Abstract

Condensed matter: electronic structure, electrical, magnetic, and optical properties

Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures

Electronic transport phenomena in thin films and low-dimensional structures

Exact sciences and technology

Physics

1 Record Views

Title: Drift mobility in hydrogenated amorphous silicon from photoconductivity decay
Creators - without role: G Moddel - University of Colorado Boulder
P Viktorovitch - École Centrale de Lyon
Publication Details: Journal of applied physics, Vol.65(1), pp.205-209
Publisher: American Institute of Physics
Identifiers: 9942899108331
Academic Unit: King Abdullah University of Science & Technology
Language: English
Resource Type: Journal article