Abstract
•Phonon scattering effect on Self-heating transistor are investigated.•The impact of temperature-dependent properties are discussed.•A reduction of temperature rise is achieved by using jump boundary condition.•A decrease in temperature is obtained using a temperature-dependent parameters.
Gate All Around Field Effect Transistor (GAAFET) is a promising alternative for improving channel control, reducing leakage currents, and bringing down the operational voltage and dynamic power. In the present work, we will attempt to address the self-heating effect in (GAAFET) structure. The finite element approach is used to discretize the Dual-Phase Lag (DPL) heat conduction equation coupled with Poisson and drift-diffusion equations for electrons and holes is performed using the finite element method. Numerical solutions are obtained using the technique of nonlinear Newton–Raphson iteration. This study is also aims to analyze the impact of temperature-dependent (TD) parameters such as thermal conductivity, heat flux phase lag, and volumetric heat capacity on temperature distribution. Further, a temperature jump boundary condition is used at the semiconductor-oxide interface to take into account the phonon scattering phenomenon. In comparison to the constant parameters, the obtained results reveal a decrease in the temporal temperature profile as well as the spatial temperature distribution. Also, the addition of jump boundary conditions causes a reduction in the maximum temperature and heat flux. Thus, the DPL model with proposed TD parameters, including jump temperature boundary condition, is recommended for the investigation of the self-heating effect, which can provide some improvement for the development of GAAFET with good reliability in the device.