Abstract
Silicon rubber based composites filled with nanosized TiB2 at various concentrations were investigated by dynamic mechanical thermal analysis and dielectric thermal analysis. It has been established that in the temperature interval from -30 degrees C to 100 degrees C the increase in the amount of TiB2 leads to the decrease in the storage modulus values (E') and the increase in those of tan delta. The decrease in the E' values and the increase in the tan delta values in the temperature range between -40 degrees C and -30 degrees C are due to the melting process of the crystal structure formed during the cooling of the sample. DETA shows that the increase in the amount of TiB2 leads to obtaining of vulcanizates with negligibly higher dielectric permittivity (epsilon'); the dielectric permittivity decrease with temperature increasing; higher frequency causes a dielectric permittivity values decrease. DETA tan delta values also decrease at higher frequency.