EFFECT OF OXYGEN ON THE OPTOELECTRONIC PROPERTIES OF AMORPHOUS HYDROGENATED SILICON

Journal article

B G Yacobi, R W Collins, G Moddel, P Viktorovitch and W Paul

Physical review. B, Condensed matter, Vol.24(10), pp.5907-5912

01/01/1981

Abstract

Materials Science

Materials Science, Multidisciplinary

Physical Sciences

Physics

Physics, Applied

Physics, Condensed Matter

Science & Technology

Technology

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Title: EFFECT OF OXYGEN ON THE OPTOELECTRONIC PROPERTIES OF AMORPHOUS HYDROGENATED SILICON
Creators - without role: B G Yacobi - Harvard University
R W Collins - Harvard University
G Moddel - Harvard University
P Viktorovitch - Harvard University
W Paul - Harvard University
Publication Details: Physical review. B, Condensed matter, Vol.24(10), pp.5907-5912
Publisher: AMERICAN PHYSICAL SOC
Number of pages: 6
Identifiers: 9943090608331
Academic Unit: King Abdullah University of Science & Technology
Language: English
Resource Type: Journal article