Abstract
Aluminum doped zinc oxide (AZO) thin films were set up at 350 degrees C on polyimide (PI) plastic substrates by chemical spray pyrolysis technique. In this commitment, the impacts of aluminum doping on basic, optical and electrical properties are examined as the capacity of dopant fixation, which was differed somewhere in the range of 0 and 7 %. The X-beam diffraction (XRD) designs displayed hexagonal wurtzite precious stone structure with a favored introduction along the (002) plane independent of Al doping fixation. Accordingly, the film's grains diminished in size with expanding Al content. Nuclear power magnifying lens (AFM) estimations are demonstrated that the surface harshness of the films is diminished because of Al doping also. The impacts of the Al content in the ZnO thin film on the optical properties of the relating slight films were contemplated. The energy band gap diminished from 3.3 eV to 3.2 eV for the examined doping fixation run. At long last, electrical examinations uncovered that the film covered with 7 at % Al dopant has a most extreme transporter grouping of 37.4 x 10(20) cm(-3).