Abstract
We report the deposition of Ti and TiN films on Si/SiO2 (100) substrate using e-beam evaporation technique. The influence of substrate temperature on the structural and morphological properties has been studied. The structure and morphology of the deposited films were analyzed by X-ray diffraction (XRD) and field emission scanning electron microscope (FESEM) measurements, respectively. XRD patterns reveal the FCC symmetry for both the Ti and TiN films. The grain size of the films was found to increase with the increase in substrate temperature. FESEM micrographs showed a smooth morphology of the film with columnar grain structure.