Abstract
ZnO/quartz heterostructure was deposited of a high purity Zn target in the presence of substrates temperatures. The optical properties and the optical constant of these film has been investigated reaching to use for Optoelectronics applications, formed at 300 torr oxygen ambient, showed an electrical resistivity of 0.0221 Omega.cm, without using post-deposition heat treatment. The Optical property shows high transparency 90 % and found to decreases sharply with the decreasing of the temperatures of the substrate. The value of the energy gap (Eg) of the prepared films is around 3.66 eV. The deposit films were analyzed using the UV-visible.