Abstract
Five compositions of Ge(14)Se(86-x)Tl(x) (x=20,22,23.5,26.8 and 28%) are prepared using the melt quench technique. Thin films of thickness d = 15,30,60,90,120 and 180 nm were deposited using electron beam evaporation technique. All the films showed a non-Ohmic behavior. At higher range of ambient temperature, the activation energy Delta E(sigma) was studied as a function of the coordination number r, average number of constraints N(cos) and heat of atomization H(s). Mott's parameters of the system Ge(14)Se(86-x)Tl(x) were studied at lower range of temperature. The effect of annealing temperature T(ann) on the activation energy were taken in consideration.