Abstract
Electron mobility calculations of n-type InAs were carried out at temperatures from 10 K up to 400 K and doping concentration from 6x10(20) m(-3) to 2.5x10(21) m(-3). The numerical computations were performed using relaxation time approximation taking into account some elastic scattering mechanisms. The temperature dependence of the electron drift mobility showed a noticeable decrease in the mobility with decreasing of temperature. It was changed, nearly, from the value 40000 cm(2)/V.s at room temperature to nearly 1300 cm(2)/V.s at 10 K. The decrease of the calculated drift mobility could be attributed to the influence of the ionized impurity scattering at low temperatures.