Abstract
ZnO (Mg, Cd)/ZnO: P multi quantum well light emitting diode structures were simulated using SiLENSe 4.0 package to investigate the effect of band gap offset between barrier layer and quantum well layers. It is analyzed that it affects significantly the performance of the multi quantum well LED. The band gap offset value was varied from 0.06 to 0.73 eV. The maximum value of Internal quantum efficiency is observed for the band gap offset value of 0.38 eV corresponding to 12 at.% Cd content in quantum layer and 05 at.% Mg content in the barrier layer. However emission intensity is found higher for the band gap offset value of 0.21 eV.