Abstract
The effect of interference on the optoelectronic properties of TiO2/Cu/TiO2 multilayers deposited by DC pulsed magnetron sputtering was scrutinized. The TCT multilayers were arranged with different thicknesses of the Cu metallic interlayer. The outcomes revealed that the band gap energy of TiO2/Cu/TiO2 multilayers decreased with increasing Cu metallic interlayer thickness. The Eg value for TiO2 single layer recorded 3.49 eV and decreased to a value of 3.12 eV for the multilayer film deposited with a 30-nm Cu metallic interlayer. Moreover, the optical conductivity increased as the Cu interlayer thickness increased. Transmittance plots with reasonable numbers of interference fringes were employed to calculate the refractive index of the examined multilayers. The results indicated that the values of n gradually increased with increasing the Cu metallic interlayer thickness. The dispersion energy Ed and the single-oscillator energy Eo were determined using a WDD single oscillator model.