Abstract
The current work concerns with the effects of cupper sulfide (CuS) buffer layer on morphological, structural and optical properties of tellurium dioxide (TeO2) nanostructured thin films synthesized by vapor transport method. Single crystalline tetragonal TeO2 crystallographic phase with enhanced peak intensity and crystallinity for CuS/TeO2 film are observed by x-ray diffraction analysis. Scanning electron microscopy examinations revealed small rod-like morphology for TeO2 and randomly oriented nanowires morphology for CuS/TeO2 samples. The estimated optical band gap energies were 3.78 and 3.63 eV for TeO2 and CuS/TeO2 nanostructured films, respectively. The photoluminescence of CuS/TeO2 film was enhanced and red-shifted from 450 to 455 nm by the presence of CuS layer. The effective charge carrier life times were 0.14 ns and 1.92 ns for TeO2 and CuS/TeO2 films, respectively. These results could be beneficial for optoelectronic devices such as light emitting devices.