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Effect of Doping Density on the Charge Rearrangement and Interface Dipole at the Molecule-Silicon Interface
Journal article   Peer reviewed

Effect of Doping Density on the Charge Rearrangement and Interface Dipole at the Molecule-Silicon Interface

Omer Yaffe, Sidharam Pujari, Ofer Sinai, Ayelet Vilan, Han Zuilhof, Antoine Kahn, Leeor Kronik, Hagai Cohen and David Cahen
Journal of physical chemistry. C, Vol.117(43), pp.22422-22427
31/10/2013

Abstract

Chemistry Chemistry, Physical Materials Science Materials Science, Multidisciplinary Nanoscience & Nanotechnology Physical Sciences Science & Technology Science & Technology - Other Topics Technology

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