Abstract
•A facile and cost-effective fabrication of Er:NiO films via NSP technique is reported.•XRD and Raman analyses confirm the monophasic films er doped NiO films development.•EDX/SEM e-mapping studies approves incorporation of er in NiO homogeneously.•χ(3) values are found between 1.81 × 10−15 to 4.56 × 10−11 esu for er doped NiO films.•The n(2) values are calculated between 5.13 × 10−14 to 5.45 × 10−10 esu for er doped NiO films.
The Er:NiO nanostructured thin films were fabricated using the spray pyrolysis method with 0.0, 2.5 and 5.0 wt.% dopant contents. Structural phase analysis of films reveals cubic structures with preferential growth along (111) plane at angle 2θ ~ 37.41°. Optical investigation of as-prepared films reveals redshift in optical bandgap (Eg) with an increase in Er contents due to the reduction of transparency in the visible region. The obtained Eg values are reduced from 3.95 to 3.80 eV with Er contents. The calculated values of χ3 and n2were found between 1.81 × 10−15 to 4.56 × 10−11 esu and 5.13 × 10−14 to 5.45 × 10−10 esu, respectively. The prepared films are more suitable for optoelectronic applications due to the high transparency and Eg.