Abstract
We describe the effect of growth temperature on the optical absorption, gain, and threshold current density of 730-nm emitting, metal-organic vapor phase epitaxy (MOVPE) grown, InP-AlGaInP quantum-dot lasers. Decreasing the growth temperature from 750 degrees C to 690 degrees C leads to an increase in ground state absorption, while sufficient optical gain and low 300 K threshold current density is obtained in the growth temperature window between 710 degrees C and 730 degrees C. Wider (16 nm compared to 8 nm) interlayer barriers lead to lower threshold current density with 300 K values as low as 165 Acm(-2) for 2-mm-long lasers with uncoated facets.