Abstract
This paper investigates the effect of temperature-jump boundary condition on nonequilibrium entropy production under the effect of the dual-phase-lagging (DPL) heat conduction model in a two-dimensional sub-100 nm metal-oxide-semiconductor field effect transistor (MOSFET). The transient DPL model is solved using finite element method. Also, the influences of the governing parameters on global entropy generation for the following cases—(I) constant applied temperature, (II) temperature-jump boundary condition, and (III) a realistic MOSFET with volumetric heat source and adiabatic boundaries—are discussed in detail and depicted graphically. The analysis of our results indicates that entropy generation minimization within a MOSFET can be achieved by using temperature-jump boundary condition and for low values of Knudsen number. A significant reduction of the order of 85% of total entropy production is observed when a temperature-jump boundary condition is adopted.