Abstract
Cu
2
ZnSnS
4
(CZTS) thin films are very promising materials for photovoltaic applications due to being made from abundant and nontoxic materials. The effect of the working pressure on the composition of the CZTS thin film, which is deposited by radio frequency magnetron sputtering of a single target, is investigated. The thin films are characterized by energy dispersive X-ray spectroscopy, X-ray diffraction, Raman spectroscopy, scanning electron microscopy and atomic force microscopy. The energy bandgap, resistivity, carrier concentration and mobility are obtained at different working pressures. The results show that the working pressure plays a crucial role in the composition of deposited films. As a consequence, the crystallinity, growth rate, surface morphology, bandgap and electrical properties change.