Abstract
In this paper, we have investigated the optical properties of InAs quantum dots (Qds) embedded near the channel of a delta-doped AlGaAs/GaAs high electron mobility transistor. In order to study the influence of the two-dimensional electron gas (2DEG) on the luminescence of QDs, we have prepared different structures in which we varied the thickness (d) separating the interface of AlGaAs/GaAs heterojunction from the InAs quantum dot layer. Various photoluminescence (PL) behaviors are observed when d decreases. PL spectra show the existence of two peaks which can be attributed to transition energies from the ground state (E1-HH1) and the first excited state (E2-HH2). A blueshift, a decrease in the PL intensity and an increase in the full width at half maximum of the PL peaks are observed, when the InAs QDs layer is closer to the 2DEG. (C) 2010 American Institute of Physics. [doi:10.1063/1.3371356]