Abstract
The initial ingot of the SnSb2S4 material was prepared by the horizontal Bridgman method. X-rays diffraction analysis of the powder showed that only homogenous SnSb2S4 phase is present in the ingot. SnSb2S4 thin films were deposited on heated glass substrates by a thermal vacuum evaporation of the crushed powder from the ingot. The substrate temperatures (Ts) were varied in the range 80-240 degrees C with a step of 40 degrees C. Here, we investigate the effect of both substrate temperature (Ts) and annealing process on the structural, optical and electrical properties of these films. As the substrate temperature increases and, after annealing under air atmosphere, the average grain size increases from 240 to 420 angstrom. The switching phenomena are also discussed on the basis of thermally induced transformations.