Abstract
The nanobaskets of SnO2 were grown on in-house fabricated anodized aluminum oxide pores of 80nm diameter using plasma enhanced chemical vapor deposition at an RF power of 60W. Hydrated stannic chloride was used as a precursor and O2 (20sccm) as a reactant gas. The deposition was carried out from 350 to 500 deg C at a pressure of 0.2Torr for 15min each. Deposition at 450 deg C results in highly crystalline film with basket like (nanosized) structure. Further increase in the growth temperature (500 deg C) results in the deterioration of the basket like structure and collapse of the alumina pores. The grown film is of tetragonal rutile structure grown along the [110] direction. The change in the film composition and bonded states with growth temperature was evident by the changes in the photoelectron peak intensities of the various constituents. In case of the film grown at 450 deg C, Sn 3d5/2 is found built up of Sn4+ and O-Sn4+ and the peaks corresponding to Sn2+ and O-Sn2+ were not detected.