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Effect of inserted Si p-n junction on GaN-based photo-electrochemical CO2 conversion system
Journal article   Open access  Peer reviewed

Effect of inserted Si p-n junction on GaN-based photo-electrochemical CO2 conversion system

Satoshi Yotsuhashi, Masahiro Deguchi, Yuka Yamada and Kazuhiro Ohkawa
AIP advances, Vol.4(6), pp.067135-067135-8
01/06/2014

Abstract

Materials Science Materials Science, Multidisciplinary Nanoscience & Nanotechnology Physical Sciences Physics Physics, Applied Science & Technology Science & Technology - Other Topics Technology
url
https://doi.org/10.1063/1.4885138View
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