Abstract
The thermal variable conductivity of a rotator semiconductor elastic medium is investigated. The medium is exposed to beams of light and an initial external magnetic field during a diffusion process. The governing equations cover the overlapping between the wave propagations of mechanical, thermal, plasma and mass diffusion distributions. The reflection wave will be obtained in the context of the thermoelasticity theory and photothermal theory. The harmonic wave analysis is used to obtain the coefficient ratios of reflection analytically of the incident wave (CI) and incident rotational wave. On the free surface of the semiconductor medium, some mechanical, plasma and thermal loads are applied to observe the physical quantities of this phenomenon. The different values of the amplitude of reflection coefficient ratios and the incidence angle are obtained numerically and shown graphically. The comparisons between the obtained results will be studied under the influence of the magnetic field, the variable thermal conductivity and rotation.