Abstract
Thin films of GeSeX where [X= In, Sb and Bi] prepared by thermal evaporation technique. The structural characterization defined by X-ray diffraction and revealed that as-deposited films were amorphous in nature. The chemical compositions of the films have been checked using energy dispersive X-ray spectroscopy (EDX). DC electrical conductivity was measured for thin films samples as a function of temperature. DC conductivity increases with both temperature and metal addition. The observed increase in conductivity with Bi higher than that with Sb which in turn is higher than that with In. The obtained data showed that the conduction activation energy has two values.Delta E-sigma 1 and Delta E-sigma 2 indicating the presence of conduction mechanisms through the investigated range of temperature. The temperature and frequency dependence of ac conductivity. ac(w), dielectric constant epsilon'(w) and dielectric loss epsilon''(w) were studied the above mentioned films in the temperature range (303-433 K) and frequency range (50 Hz -4 MHz). The obtained data revealed that sigma(ac)(w) for all investigated compositions was temperature dependence, and obey A ws law. Also, it has been observed that epsilon'(w) and epsilon''(w) exhibit strong temperature and frequency dependence for all investigated compositions.