Abstract
Mossbauer spectroscopy, magnetic measurements, X-ray diffraction (XRD), as well as impedance analyzer are some of the techniques that have been employed in this study to evaluate how the dielectric, magnetic and structural properties of GaFeO3 (GFO) ceramics are affected by Ti and Zn doping. polycrystalline Ga1-xZnxFe1-xTixO3 (0 <= x <= 0.1) were prepared by solid state reaction. They showed an orthorhombic crystal structure with Pc2(1)n space group. The magnetic transition temperature decrease due to the dilution of the magnetic interaction. A noteworthy effect of substitution of multiple elements at the Ga and Fe sites on dielectric constant and tangent loss of GaFeO3 has been observed. Complete studies of temperature and frequency dependence of dielectric constant and impedance have provided the effect of grains and grain boundaries on the conduction mechanism and dielectric relaxation of the material. Impedance spectroscopy results have revealed a distinct conduction process at grain and grain boundaries. (C) 2019 The Authors. Published by Elsevier B.V.