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Effect of strain on electronic structure of AA stacked GeSe bilayer
Journal article   Peer reviewed

Effect of strain on electronic structure of AA stacked GeSe bilayer

Shagun Nag, Anuradha Saini, Ranber Singh and Ranjan Kumar
Materials today : proceedings, Vol.28, pp.1853-1857
2020
DOI: https://doi.org/10.1016/j.matpr.2020.05.291

Abstract

Band gap Density-functional theory Electronic Structure Two-dimensional materials Uniaxial Strain
The electronic structure of the AA stacked GeSe bilayer is investigated using the density functional theory (DFT) calculations. Bilayer is an indirect band gap semiconductor having band gap equal to 1.05 eV. This indirect band gap can be further tuned via in-plane strain along zigzag and armchair direction. Further, there is an indirect-to-direct band gap transition at tensile strain of 2% along the zigzag direction.

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