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Effect of temperature dependent relaxation time of charge carriers on the thermoelectric properties of LiScX (X=C, Si, Ge) half-Heusler alloys
Journal article   Peer reviewed

Effect of temperature dependent relaxation time of charge carriers on the thermoelectric properties of LiScX (X=C, Si, Ge) half-Heusler alloys

Anuradha Saini, Ranber Singh, A. A. AlShaikhi and Ranjan Kumar
Journal of alloys and compounds, Vol.806, pp.1536-1541
25/10/2019
DOI: https://doi.org/10.1016/j.jallcom.2019.07.306

Abstract

Chemistry Chemistry, Physical Materials Science Materials Science, Multidisciplinary Metallurgy & Metallurgical Engineering Physical Sciences Science & Technology Technology
We compute the temperature dependent relaxation time (tau) of charge carriers in LiScX (X=C, Si, Ge) half-Heusler (hH) alloys using the deformation potential theory. This temperature dependent t of charge carriers is used to investigate its effect on the thermoelectric properties of these hH alloys. It is shown that there is a significant effect of temperature dependent t of charge carriers on the thermoelectric properties of these hH alloys. (C) 2019 Elsevier B.V. All rights reserved.

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