Abstract
In spintronics, spin degree of freedom of an electron is used to store and process information and thus can provide numerous advantages over conventional electronics by providing new functionalities. In this paper, we employ the semiclassical Monte Carlo approach to study the spin polarized transport in bilayer graphene. Due to lower spin orbit interaction (SOI) and higher spin relaxation lengths, graphene is considered as suitable material for spintronics application. Spin relaxation in bilayer graphene is caused by D'yakonov-Perel (DP) relaxation and Elliott-Yafet (EY) relaxation. The effect of temperature, magnetic field and driving electric field on spin relaxation length is studied. We have considered injection polarization along z-direction which is perpendicular to the plane of graphene and the magnitude of ensemble averaged spin variation is studied along the x-direction which is the transport direction.