Effect of temperature on the electronic structure in n-modulation-doped AlxGa(1-x)As/GaAs heterostructure

Journal article

Peer reviewed

H. Dakhlaoui and S. Jaziri

Physica status solidi. C, Vol.3(9), pp.3316-3320

09/2006

Abstract

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Title: Effect of temperature on the electronic structure in n-modulation-doped AlxGa(1-x)As/GaAs heterostructure
Creators - without role: H. Dakhlaoui - E-mail: h_dakhlaoui@yahoo.fr
S. Jaziri - Département de Physique, Faculté des Sciences de Bizerte, 7000, Tunisie
Publication Details: Physica status solidi. C, Vol.3(9), pp.3316-3320
Publisher: WILEY-VCH Verlag
Number of pages: 5
Identifiers: 9914700108331
Academic Unit: Imam Abdulrahman Bin Faisal University
Language: English
Resource Type: Journal article