Abstract
Glasses with compositions (40
−
x)PbO--
x
ZnO--60(B
2O
3--SiO
2) (
x
=
5, 10, 15, 20) have been prepared. Substitution of ZnO for PbO increased glass bandgap (
E
g
) and crystallization ability greatly. Crystalline phases of bulk glasses after rapid thermal processing (RTP) were identified by X-ray diffraction (XRD). Transmission line model (TLM) was employed to measure the electrical performance of Ag electrodes screen printed on polycrystalline Si substrates using Ag thick-film pastes and by RTP. The conductivity (
σ) decreased while specific contact resistance (
ρ
c
) was not monotonic varied with increasing ZnO content. The correlation between electrical performance and glass barrier formed on the Ag gridline and Si emitter interface has been investigated.