Abstract
In this paper, we are presenting the effects of pressure using cold isostatic press (CIP) on the physical properties of nano-SiC-doped bulk sample Mg
1.15
B
1.96
C
0.04
. Effects on lattice parameters, critical current density (
J
c
), upper critical field (
B
c2
), irreversibility field (
B
irr
), grain connectivity, anisotropy, and flux pinning force maximum as a function of the pressure have been thoroughly investigated. X-ray diffraction (XRD) analysis shows that
a
and
c
lattice parameters are decreased due to the CIP. The mass density of the pressed samples is increased. There is no change in the
T
c
of the pressed samples as compared to that of the unpressed one. The
J
c
shows enhancement in high-field region due to the application of CIP. Surprisingly, our CIP-applied samples show lower
J
c
at low fields below 3 T. The
J
c
of the sample pressed at 0.4 GPa shows enhancement by a factor of 4 than that of the unpressed one at 6 T and 20 K while depressing by a factor of 1.1 at 2 T, and the sample pressed at 0.6 GPa has suppressed
J
c
throughout the entire field range measured. Such behavior is indicative of increased anisotropy as a result of CIP. This suggests that an optimum CIP value exists that improves
J
c
in both field ranges. The anisotropy of the CIP-applied samples is increased with the exception of 0.4 GPa. There is also noticeable enhancement in the
B
c2
and
B
irr
in all the pressed samples.