Effects of Low Temperature Annealing of B+ + Si+ OR BF2+ + Si+ Implanted Silicon

Journal article

Peer reviewed

S. R. Wilson, R. B. Gregory, W. M. Paulson, A. H. Hamdi and F. D. McDaniel

IEEE transactions on nuclear science, Vol.30(2), pp.1730-1733

01/01/1983

Abstract

Amorphous materials

Annealing

Boron

Epitaxial growth

Implants

Impurities

Lattices

Silicon

Solids

Temperature distribution

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Title: Effects of Low Temperature Annealing of B+ + Si+ OR BF2+ + Si+ Implanted Silicon
Creators - without role: S. R. Wilson - Semiconductor Research and Development Laboratories Motorola Semiconductor Products Sector 5005 E. McDowell Road, Phoenix, AZ 85008
R. B. Gregory - Motorola
W. M. Paulson - Motorola
A. H. Hamdi - University of North Texas
F. D. McDaniel - University of North Texas
Publication Details: IEEE transactions on nuclear science, Vol.30(2), pp.1730-1733
Publisher: IEEE
Identifiers: 9933633008331
Academic Unit: University of Tabuk
Language: English
Resource Type: Journal article