Abstract
ZnO thin films were deposited on polyethersulfone (PES) substrates by atomic layer deposition (ALD). We investigated the effects of O
2 plasma substrate pre-treatment power for various deposition temperatures from 100
°C to 250
°C. X-ray diffraction (XRD) measurements revealed that the ZnO thin films prefer
c-axis orientation when the deposition temperature is increased. In addition, the structural properties of ZnO thin films varied with plasma pre-treatment power.