Abstract
The reduction of native oxides on an In As surface using various wet and dry chemical treatments including hydrochloric acid (HCl) treatment sulfide treatment and in situ trimethyl aluminum (TMA) treatment before the atomic layer deposition (ALD) of Al2O3 on In As is studied X ray photoelectron spectrum (XPS) results show that the effect of surface cleaning by TMA was apparent almost after the first pulse but that TMA cleaning is not as effective as wet chemical surface cleaning The combination of wet chemical treatment and TMA pretreatment is the most effective method for In As surface cleaning as indicated by the XPS analysis Capacitance-voltage (C-V) and current density-voltage (J-V) characteristics on metal-oxide-semiconductor capacitance (MOSCAP) structures were also investigated to evaluate the Al2O3/n In As interface quality after different surface treatments and the results are consistent with the XPS analysis (C) 2010 The Japan Society of Applied Physics