Abstract
ZnO thin films have been prepared on Al2O3/Si by atomic layer deposition (ALD) at 150 degrees C process temperature After deposition, post-growth annealing was carried out on the ZnO thin films under N-2 ambient at different annealing tenweratures The Surface morphology and optical property of ZnO/Al2O3/St were investigated by scanning electron microscopy (SEM), atomic force microscopy (AFM) and photoluminescence (PL) The qualities of annealed samples are impiovecl significantly compared with as-grown ZnO/Al2O3/Si In particularly, it shows gradual improvement of optical property with increase of annealing temperature the effect of Al2O3 buffer layer was also investigated comparing ZnO/Al2O3/Si and ZnO/Si annealed at high temperature (>= 800 degrees C) (C) 2009 Elsevier B V All rights reserved