Abstract
Linear, third-order, total optical absorption and relative refractive index change coefficients are investigated for an n-type
δ
-doped GaAs/Al
x
Ga
1
-
x
As quadruple quantum well with electric, magnetic as well as laser fields as external probes. The Hamiltonian operator of the quaternary
δ
-doped well is written with the inclusion of laser dressed potential term and electric, magnetic field energy operators, in order to obtain the electronic spectrum. Optical properties are calculated by obtained electronic states within the framework of compact density matrix approach. The results show that, in the presence of external electric, magnetic and intense laser fields, the evaluated optical coefficients exhibit similar shifting characteristic with different peak magnitude variations. These findings in the optical properties of quadruple
δ
-doped quantum wells in the presence of external fields may provide guidance to the practical studies.