Abstract
The electrical and optical characteristics of InGaN quantum-well light-emitting diodes with large-bandgap AlGaInN thin barriers were analyzed with the consideration of carrier transport effect for efficiency droop suppression. The lattice-matched AlGaInN quaternary alloys with different compositions, thicknesses, and positions were employed as thin barrier layers (1-2 nm) surrounding the InGaN QW in LED structures. The increased effective barrier heights of AlGaInN thin barrier led to suppression of carrier leakage as compared to conventional InGaN QW LEDs with GaN barrier only. The current work provides a comprehensive simulation taking into consideration the carrier transport in self-consistent manner, and the finding indicated the use of thin layers of AlGaInN or AlInN barriers as sufficient for suppressing the droop in InGaN-based QW LEDs. The efficiency of InGaN QW LED with the insertion of lattice-matched Al0.82In0.18N thin barrier layers showed the least droop phenomenon at high current density among the investigated LEDs. The thickness study indicated that a thin layer (< 2 nm) of large-bandgap material in the barrier region was sufficient for efficiency droop suppression.