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Efficiency of formation of radiation defects in silicon upon implantation of silicon and phosphorus ions
Journal article   Peer reviewed

Efficiency of formation of radiation defects in silicon upon implantation of silicon and phosphorus ions

M Jadan, A R Chelyadinskii and V Y Yavid
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, Vol.225(4), pp.516-520
01/10/2004
DOI: https://doi.org/10.1016/j.nimb.2004.05.005

Abstract

Instruments & Instrumentation Nuclear Science & Technology Physical Sciences Physics Physics, Atomic, Molecular & Chemical Physics, Nuclear Science & Technology Technology
Accumulation and annealing of radiation defects in silicon and in the heavily phosphorus doped silicon layers implanted with Si+ or P+ ions have been studied by the X-ray diffraction method. The observed differences in the introduction rates of stable radiation defects are due to the differences between the intensities of annihilation processes determined by charge states of defects. (C) 2004 Elsevier B.V. All rights reserved.

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