Abstract
Perovskite nanocrystals (PeNCs) deliver size‐ and composition‐tunable luminescence of high efficiency and color purity in the visible range. However, attaining efficient electroluminescence (EL) in the near‐infrared (NIR) region from PeNCs is challenging, limiting their potential applications. Here we demonstrate a highly efficient NIR light‐emitting diode (LED) by doping ytterbium ions into a PeNCs host (Yb3+ : PeNCs), extending the EL wavelengths toward 1000 nm, which is achieved through a direct sensitization of Yb3+ ions by the PeNC host. Efficient quantum‐cutting processes enable high photoluminescence quantum yields (PLQYs) of up to 126 % from the Yb3+ : PeNCs. Through halide‐composition engineering and surface passivation to improve both PLQY and charge‐transport balance, we demonstrate an efficient NIR LED with a peak external quantum efficiency of 7.7 % at a central wavelength of 990 nm, representing the most efficient perovskite‐based LEDs with emission wavelengths beyond 850 nm.
We doped yitterbium ions into perovskite nanocrystal hosts for extending their electroluminescence wavelength towards 1000 nm. The synergy of halide‐stoichiometry control and surface passivation enables us to achieve an efficient near‐infrared light‐emitting diode with a peak external quantum efficiency of 7.7 %, representing the highest efficiency among organic LEDs and perovskite LEDs with peak wavelengths beyond 850 nm to date.