Abstract
This paper presents a computationally efficient physics-based compact model for the Schottky barrier CNTFET. This compact model captured a number of features exhibited by these transistors such as ballistic transport and channel potential variation with respect to channel charge. Also quantum capacitance is pointed out. A new analytical model of the channel charge is presented here. The compact model accuracy is verified within its range of validity. To investigate on the SB influence, two classical circuit applications are simulated; the logical inverter and the 5 stages ring oscillator.